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MURS340 thru MURS360
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage 400 to 600V Forward Current 3.0A Reverse Recovery Time 50ns
Ultrafast Rectifiers
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.126 (3.20) 0.114 (2.90) 0.245 (6.22) 0.220 (5.59)
0.185 MAX. (4.69 MAX.)
0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75)
0.121 MIN. (3.07 MIN.) 0.060 MIN. (1.52 MIN.) 0.320 REF
0.008 (0.203) Max.
Dimensions in inches and (millimeters)
Features
* Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes * Ultrafast recovery time for high efficiency * Glass passivated junction * High temperature soldering guaranteed: 250C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case: JEDEC DO-214AB molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.007oz., 0.21g
Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified.
Parameter Device Marking Codes Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current at: (See figure 1) TL = 130C TL = 115C VRRM VRWM VDC IF(AV) IFSM RJL TJ, TSTG Symbol MURS340 MG 400 400 400 3.0 4.0 125 11 -65 to +175C MURS360 MJ 600 600 600 V V V A A C/W C Unit
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance junction to ambient Operating junction and storage temperature range
Electrical Characteristics
Maximum instantaneous forward voltage (1)
Ratings at 25C ambient temperature unless otherwise specified.
IF = 3.0A, TJ = 25C IF = 4.0A, TJ = 25C IF = 3.0A, TJ = 150C TJ = 25C TJ = 150C
VF IR trr trr tfr
1.25 1.28 1.05 10 250 50 75 25
V A ns ns ns
Maximum instantaneous reverse current at rated DC blocking voltage (1) Maximum reverse recovery time at, IF=1.0A, di/dt=50A/s, VR=30V, Irr=10% IRM Maximum forward recovery time IF=1.0A, di/dt=100A/s, Rec. to 1.0V
Note: (1) Pulse test: tp = 300s, duty cycle 2%
Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A
Document Number 88816 18-Nov-02
www.vishay.com 1
MURS340 thru MURS360
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
5 150
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Average Forward Current (A)
125 100
Average Forward Current (A)
4
3
75 50 25
2
1
0 25
0 50 75 100 125 150 175 1 10 100
TL -- Lead Temperature (C)
Number of Cycles at 60 HZ
Fig. 3 - Typical Instantaneous Forward Characteristics
100 1000
Fig. 4 - Typical Reverse Characteristics
Instantaneous Reverse Current (A)
Instantaneous Forward Current (A)
100 TJ = 150C 10 TJ = 125C TJ = 100C 1
10
TJ = 125C
TJ = 150C 1 TJ = 100C TJ = 25C 0.1 0.3
0.1 TJ = 25C 0.01 0 20 40 60 80 100
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
Stored Charge / Reverse Recovery Time (nC/ns)
1000 120
Fig. 6 - Typical Reverse Switching Characteristics
Trr Qrr 100 1A, 50A/s, 30V 80 60
Junction Capacitance (pF)
100
10
40 20
1 0.1
0 25 50 75 100 125
1
10
100
Reverse Voltage (V) www.vishay.com 2
Junction Temperature (C) Document Number 88816 18-Nov-02

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